C3279 ?npn silicon ? parameter symbol rating unit c ollector-base voltage v cbo 3 0v collector-emitter voltage v ceo 10 v emitter-base voltage v ebo 6v collector current i c 2a collector power dissipation p c 750 mw junction temperature t j 150 storage temperature range t stg 55~150 electrical characteristics ta=25 parameter symbol min. typ. max. unit test condition dc current gain h fe 140 600 v ce = 1v ic=500 ma collector cut-off current i cbo 0.1 a v cb =30 v i e =0 emitter cut-off current i ebo 0.1 a v eb = 6v ic=0 collector-base breakdown voltage bv cbo 30 v ic= 0.1ma i e =0 collector-emitter breakdown voltage bv ceo 10 v ic= 10ma i b =0 emitter-base breakdown voltage bv ebo 6v i e = 1ma ic=0 base-emitter voltage v be 0.86 1.5 v v ce = 1v ic= 2a collector-emitter saturation voltage v ce(sat) 0.2 0.5 v ic= 2a i b = 50ma gain bandwidth product f t 150 mhz ic= 0.5a v ce = 1v common base output capacitance c ob 27 pf v cb = 10v, i e =0, f = 1mhz ?1ae???? application power amplifier application switching application. maximum ratings ta25 h fe 140 240 200 330 300 450 420 600 h fe classification classification l m n p http://
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